Spin Injection from Ferromagnetic Semiconductor CoZnO into ZnO

被引：0
作者：
Gang JI Shishen YAN Yanxue CHEN Qiang CAo Wei XIA Yihua LIU Liangmo MEI Ze ZHANG Institute of Microstructure and Properties of Advanced MaterialsBeijing University of TechnologyBeijing China School of Physics and Microelectronicsand National Key Laboratory of Crystal MaterialsShandong UniversityJinan China School of Information Science and Engineeringand National Key Laboratory of Crystal MaterialsShandong UniversityJinan China [1 ,2 ,2 ,2 ,3 ,2 ,2 ,1 ,1 ,100124 ,2 ,250100 ,3 ,250100 ]
机构：
来源：
JournalofMaterialsScience&Technology | 2008年 / 03期
关键词：
Spin injection; Magnetoresistance; Ferromagnetic semiconductor;
D O I：
暂无
中图分类号：
TN304 [材料];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
<正>2×(FeNi/CoZnO)/ZnO/(CoZnO/Co)×2 spin-injection devices were prepared by sputtering and photo-lithogra- phy.In the devices,two composite magnetic layers 2×(FeNi/CoZnO)and(CoZnO/Co)×2 with different coercivities were used to fabricate the ZnO-based semiconductor spin valve.Since the CoZnO ferromagnetic semiconductor layers touched the ZnO space layer directly,the significant spin injection from CoZnO into ZnO was observed by measuring the magnetoresistance of the spin-inJection devices.The magnetoresistance reduced linearly with increasing temperature,from 1.12% at 90 K to 0.35% at room temperature.
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页码：415 / 418
页数：4
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