The anomalous Hall effect in epitaxial Fe(110) films grown on Ga As(110)

被引：0
|
作者：
Jianli Xu [1 ]
Lin Wu [1 ]
Yufan Li [1 ]
Dai Tian [1 ]
Kai Zhu [1 ]
Xinxin Gong [1 ]
Xiaofeng Jin [1 ]
机构：
[1] State Key Laboratory of Surface Physics and Department of Physics, Fudan University
来源：
ScienceBulletin | 2015年 / 60卷 / 14期
基金：
中国国家自然科学基金;
关键词：
Anomalous Hall effect; Fe; Skew scattering; Side jump; Intrinsic anomalous Hall effect;
D O I：
暂无
中图分类号：
O484 [薄膜物理学];
学科分类号：
080501 ; 1406 ;
摘要：
The anomalous Hall effect in epitaxial Fe(110)films grown on Ga As(110) is investigated as a function of both film thickness and temperature. The Berry curvatureinduced intrinsic contribution of 996 X 1cm 1is determined experimentally for the first time. Together with 821 X 1cm 1in Fe(111) and 1100 X 1cm 1in Fe(001)obtained earlier, we show unambiguously the anisotropy of the Berry curvature contribution to the anomalous Hall effect in single-crystal Fe.
引用
收藏
页码：1261 / 1265
页数：5
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