Temperature dependent Raman and photoluminescence of vertical WS2/MoS2 monolayer heterostructures

被引：0
|
作者：
Zhijian Hu [1 ]
Yanjun Bao [2 ]
Ziwei Li [2 ]
Yongji Gong [4 ]
Rui Feng [2 ]
Yingdong Xiao [2 ]
Xiaochun Wu [1 ]
Zhaohui Zhang [2 ]
Xing Zhu [2 ,1 ]
Pulickel M.Ajayan [4 ]
Zheyu Fang [2 ]
机构：
[1] Key Laboratory of Nanoscale Measurement and Standardization National Center for Nanoscience and Technology
[2] State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University
[3] Collaborative Innovation Center of Quantum Matter
[4] Department of Materials Science and Nano Engineering, Rice University
来源：
Science Bulletin | 2017年 / 62卷 / 01期
基金：
中国国家自然科学基金; 北京市自然科学基金;
关键词：
Temperature-dependent; Raman spectra; Photoluminescence; Transition metal dichalcogenides; Heterostructures;
D O I：
暂无
中图分类号：
TN304.2 [化合物半导体];
学科分类号：
摘要：
Heterostructures from two-dimensional transition-metal dichalcogenides MX2have emerged as a hot topic in recent years due to their various fascinating properties. Here, we investigated the temperature dependent Raman and photoluminescence(PL) spectra in vertical stacked WS2/MoS2monolayer heterostructures. Our result shows that both E2g1and A1gmodes of WS2and MoS2vary linearly with temperature increasing from 300 to 642 K. The PL measurement also reveals strong temperature dependencies of the PL intensity and peak position. The activation energy of the thermal quenching of the PL emission has been found to be equal to 69.6 meV. The temperature dependence of the peak energy well follows the bandgap shrinkage of bulk semiconductor.
引用
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页码：16 / 21
页数：6
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