Influence of Zn Diffusion on Bandwidth and Extinction in MQW Electroabsorption Modulators Buried with Semi-Insulating InP

被引:0
|
作者
Takayuki Yamanaka
Hideki Fukano
Ken Tsuzuki
Munehisa Tamura
Ryuzo Iga
Matsuyuki Ogasawara
Yasuhiro Kondo
Tadashi Saitoh
机构
[1] 243-0198 JAPAN
[2] 3-1 Morinosato Wakamiya
[3] Atsugi
[4] Kanagawa
[5] NTT Corporation
[6] NTT Photonics Laboratories
关键词
MQW; Influence of Zn Diffusion on Bandwidth and Extinction in MQW Electroabsorption Modulators Buried with Semi-Insulating InP; Zn; EAM; in; with; of; on;
D O I
暂无
中图分类号
O436 [物理光学(波动光学)];
学科分类号
070207 ; 0803 ;
摘要
A comprehensive analysis of multi-quantum-well electroabsorption modulators buried with semi-insulating (SI)-InP is presented. We quantitatively demonstrate that suppression of Zn diffusion into the burying and optical core layers plays a key role in high-speed and high-extinction operation.
引用
收藏
页码:439 / 440
页数:2
相关论文
共 3 条
  • [1] A. Dadger,et al. Journal of Crystal Growth . 1998
  • [2] T.Yamanaka et al.Appl Phys. Lett . 1994
  • [3] S. Kondo et al. Japanese Journal of Applied Physics .