DistributionofelectrontrapsinSiO2/HfO2nMOSFET

被引：0

作者：

侯晓慧 ^{[1
]}

郑雪峰 ^{[2
]}

王奥琛 ^{[2
]}

王颖哲 ^{[2
]}

文浩宇 ^{[2
]}

刘志镜 ^{[1
]}

李小炜 ^{[2
]}

吴银河 ^{[2
]}

机构：

[1] School of Computer Science, Xidian University

[2] Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University

来源：

Chinese Physics B | 2016年 / 05期

关键词：

energy and spatial distribution; electron trap; HfO2;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

In this paper, the principle of discharge-based pulsed I–V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO2 layer have been extracted. Two peaks are observed, which are located at ?E -1.0 eV and-1.43 eV, respectively. It is found that the former one is close to the SiO2/HfO2 interface and the latter one is close to the gate electrode. It is also observed that the maximum discharge time has little effect on the energy distribution. Finally, the impact of electrical stress on the HfO2 layer is also studied. During stress, no new electron traps and interface states are generated. Meanwhile, the electrical stress also has no impact on the energy and spatial distribution of as-grown traps. The results provide valuable information for theoretical modeling establishment, material assessment,and reliability improvement for advanced semiconductor devices.

引用

页码：367 / 372

页数：6

共 6 条

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