Long-range surface plasmon polaritons at THz frequencies in thin semiconductor layers

被引：0

作者：

Audrey Berrier ^{[1
]}

Jaime Gmez Rivas ^{[1
,2
]}

机构：

[1] FOM Institute for Atomic and Molecular Physics,c/o Philips Research,High-Tech Campus , AE Eindhoven,The Netherlands

[2] COBRA Research Institute,Eindhoven University of Technology,POBox , MB Eindhoven,The Netherlands

来源：

ChineseOpticsLetters | 2011年 / 9卷 / 11期

关键词：

InSb; THz; Long-range surface plasmon polaritons at THz frequencies in thin semiconductor layers;

D O I：

暂无

中图分类号：

TN304 [材料]; O53 [等离子体物理学];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ; 070204 ;

摘要：

We present a theoretical investigation of THz long-range surface plasmon polaritons propagating on thin layers of InSb.The metallic behavior of doped semiconductors at THz frequencies allows the excitation of surface plasmon polaritons with propagation and confinement lengths that can be actively controlled.This control is achieved by acting on the free carrier density,which can be realized by changing the temperature of InSb.

引用

页码：66 / 68

页数：3