CZOCHRALSKI SILICON CRYSTAL GROWTH IN NITROGEN ATMOSPHERE UNDER REDUCED PRESSURE

被引：0
|
作者：
阙端麟
李立本
陈修治
林玉瓶
张锦心
周晓
杨建松
机构：
[1] PRC
[2] Department of Materials Science
[3] Hangzhou 310027
[4] Zhejiang University
来源：
Science China Mathematics | 1991年 / 08期
基金：
中国国家自然科学基金;
关键词：
CZ-Si; crysta1; growth; nitrogen atmosphere under reduced pressure;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The experimental results of Czochralski silicon (CZ-Si) crystal growth in nitrogen at-mosphere are reported. The chemical reaction between silicon and nitrogen under reduced pres-sures is studied. Nitrogen gas flow under reduced pressure can eliminate the SiO smokes,and high yield of dislocation-free single crystals can be obtained. Silicon with low carbonconcentration grown by this method exhibits good electrical properties. Heat treatment be-haviours of the Si crystals have been studied. After tri-step intrinsic gettering heat treat-ment, ideal clean denuded zone is formed in Si-wafers.
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页码：1017 / 1024
页数：8
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