Temperature-frequency dependence and mechanism of dielectric properties for γ-Y2Si2O7

被引：0
作者：
侯志灵 [1 ,2 ]
曹茂盛 [1 ]
袁杰 [3 ]
宋维力 [1 ]
机构：
[1] School of Materials Science and Engineering,Beijing Institute of Technology
[2] School of Information Engineering,Central University for Nationalities
[3] School of Science,Beijing University of Chemical Technology
来源：
Chinese Physics B | 2010年 / 01期
基金：
中国国家自然科学基金; 国防预研究基金;
关键词：
γ-Y2Si2O7; dielectric properties; structural relaxation polarization; low dielectric loss;
D O I：
暂无
中图分类号：
O482.4 [电学性质];
学科分类号：
070205 ; 0805 ; 080502 ; 0809 ;
摘要：
This paper reports that single-phase γ-Y2Si2O7 is prepared via a sufficient blending and cold-pressed sintering technique from Y2O3 powder and SiO2 nanopowder. It studies the dielectric properties of γ-Y2Si2O7 as a function of the temperature and frequency. The γ-Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400℃ in the range of 7.3-18 GHz. The mechanism for polarization relaxation of the as-prepared γ-Y2Si2O7 differing from that of SiO 2 is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.
引用
收藏
页码：510 / 514
页数：5
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