Temperature-frequencydependenceandmechanismofdielectricpropertiesforγ-Y2Si2O7

被引：0

作者：

侯志灵 ^{[1
,2
]}

曹茂盛 ^{[1
]}

袁杰 ^{[3
]}

宋维力 ^{[1
]}

机构：

[1] School of Materials Science and Engineering,Beijing Institute of Technology

[2] School of Science,Beijing University of Chemical Technology

[3] School of Information Engineering,Central University for Nationalities

来源：

Chinese Physics B | 2010年 / 01期

关键词：

γ-Y2Si2O7; dielectric properties; structural relaxation polarization; low dielectric loss;

D O I：

暂无

中图分类号：

O482.4 [电学性质];

学科分类号：

070205 ; 0805 ; 080502 ; 0809 ;

摘要：

This paper reports that single-phase γ-Y2Si2O7 is prepared via a sufficient blending and cold-pressed sintering technique from Y2O3 powder and SiO2 nanopowder. It studies the dielectric properties of γ-Y2Si2O7 as a function of the temperature and frequency. The γ-Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400℃ in the range of 7.3-18 GHz. The mechanism for polarization relaxation of the as-prepared γ-Y2Si2O7 differing from that of SiO 2 is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.

引用

页码：510 / 514

页数：5