Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability

被引：0

作者：

Weiyi Li ^{[1
,2
]}

Zhili Zhang ^{[1
,2
]}

Kai Fu ^{[1
]}

Guohao Yu ^{[1
]}

Xiaodong Zhang ^{[1
]}

Shichuang Sun ^{[1
,3
]}

Liang Song ^{[1
,2
]}

Ronghui Hao ^{[1
,4
]}

Yaming Fan ^{[1
]}

Yong Cai ^{[1
]}

Baoshun Zhang ^{[1
,5
]}

机构：

[1] Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS

[2] University of Chinese Academy of Sciences

[3] Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology

[4] Nanjing University of Science and Technology, school of materials science and engineering

[5] Suzhou Powerhouse Electronics Co, Ltd

来源：

Journal of Semiconductors | 2017年 / 07期

关键词：

GaN HEMT; enhancement-mode; electric field distribution; Vth instability;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

We proposed a novel Al Ga N/Ga N enhancement-mode(E-mode) high electron mobility transistor(HEMT) with a dual-gate structure and carried out the detailed numerical simulation of device operation using Silvaco Atlas. The dual-gate device is based on a cascode connection of an E-mode and a D-mode gate. The simulation results show that electric field under the gate is decreased by more than 70% compared to that of the conventional E-mode MIS-HEMTs(from 2.83 MV/cm decreased to 0.83 MV/cm). Thus, with the discussion of ionized trap density, the proposed dual-gate structure can highly improve electric field-related reliability, such as, threshold voltage stability. In addition, compared with HEMT with field plate structure, the proposed structure exhibits a simplified fabrication process and a more effective suppression of high electric field.

引用

页码：53 / 59

页数：7

共 2 条

[1]

Monolithically integrated enhancement/depletion-mode Al Ga N/Ga N HEMTs SRAM unit and voltage level shifter using fluorine plasma treatment[J]. 陈永和,郑雪峰,张进城,马晓华,郝跃.Journal of Semiconductors. 2016(05)

[2] Thin-barrier enhancement- mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator [J].

Wang Zheli ;

Zhou Jianjun ;

Kong Yuechan ;

Kong Cen ;

Dong Xun ;

Yang Yang ;

Chen Tangsheng .

JOURNAL OF SEMICONDUCTORS, 2015, 36 (09)

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