Thermal investigation of high-power GaAs-based laser diodes

被引：0

作者：

Jichuan Liu ^{[1
]}

Cuiluan Wang ^{[1
]}

Suping Liu ^{[1
]}

Xiaoyu Ma ^{[1
]}

机构：

[1] National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductor,Chinese Academy of Sciences

来源：

Journal of Semiconductors | 2017年 / 38卷 / 05期

关键词：

laser diodes; high power; temperature rise; thermal resistance; electrical transient method;

D O I：

暂无

中图分类号：

TN31 [半导体二极管];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

The thermal characteristics of high-power AlGaAs/GaAs laser diodes(LDs) at high current(2-10 A)are studied with electrical transient method.The temperature rise increases linearly with the current.The thermal resistance of chip is the largest proportion of total thermal resistance.By increasing the width of the chip from 500 to 800 fim,the temperature rise and thermal resistance decrease by 8.5%and 8.8%,respectively.

引用

页码：63 / 65

页数：3

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