Interface characterization of Mo/Si multilayers

被引：0

作者：

赵娇玲 ^{[1
,2
]}

贺洪波 ^{[1
]}

王虎 ^{[1
,2
]}

易葵 ^{[1
]}

王斌 ^{[1
,2
]}

崔云 ^{[1
]}

机构：

[1] Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences

[2] University of Chinese Academy of Sciences

来源：

Chinese Optics Letters | 2016年 / 14卷 / 08期

关键词：

Si; Mo; HRTEM;

D O I：

暂无

中图分类号：

O434.1 [X射线];

学科分类号：

070207 ; 0803 ;

摘要：

Complementary analysis techniques are applied in this work to study the interface structure of Mo/Si multilayers. The samples are characterized by grazing incident x-ray reflectivity, x-ray photoelectron spectroscopy,high-resolution transmission electron microscopy, and extreme ultraviolet reflectivity. The results indicate that the layer thickness is controlled well with small diffusion on the interface by forming MoSi2. Considering MoSi2 as the interface composition, simulating the result of our four-layer model fits well with the measured reflectivity curve at 13.5 nm.

引用

页码：102 / 105

页数：4

共 5 条

[1]

Effect of defects on the reflectivity of Cr/C multilayer soft X-ray mirror at 4.48nm[J] . Songwen Deng,Hongji Qi,Kui Yi,Zhengxiu Fan,Jianda Shao.Applied Surface Science . 2009 (16)

[2]

The Effect of Mo Crystallinity on Diffusion through the Si-on-Mo Interface in EUV Multilayer Systems[J] . Bruijn S.,van de Kruijs R.W.E.,Yakshin A.E.,Bijkerk F..Defect and Diffusion Forum . 2009 (283)

[3]

Interlayer composition in Mo–Si multilayers using X-ray photoelectron spectroscopy[J] . M. Nayak,G.S. Lodha,R.V. Nandedkar,S.M. Chaudhari,P. Bhatt.Journal of Electron Spectroscopy and Related Phenomena . 2006 (3)

[4]

Interface-engineered EUV multilayer mirrors[J] . Sergiy Yulin,Nicolas Benoit,Torsten Feigl,Norbert Kaiser.Microelectronic Engineering . 2006 (4)

[5]

Surface roughness and interface diffusion studies on thin Mo and W films and Mo/Si and W/Si interfaces[J] . D. Bhattacharyya,A.K. Poswal,M. Senthilkumar,P.V. Satyam,A.K. Balamurugan,A.K. Tyagi,N.C. Das.Applied Surface Science . 2003 (1)

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