A new small-signal model for asymmetrical AlGaN/GaN HEMTs

被引：0

作者：

马腾 ^{[1
]}

郝跃 ^{[1
]}

陈炽 ^{[1
]}

马晓华 ^{[1
]}

机构：

[1] National Key Laboratory of Wide Band-Gap Semiconductor Technology Department of Microelectronics,Xidian University

来源：

半导体学报 | 2010年 / 31卷 / 06期

关键词：

small-signal model; GaN HEMT; parameter extraction; asymmetrical structure;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

A new small-signal model for anisomerous AlGaN/GaN high electron mobility transistors(HEMTs) is proposed for accurate prediction of HEMT behavior up to 20 GHz.The parasitic elements are extracted from both cold-FET and pinch-off bias to obtain more precise results and the intrinsic part is directly extracted.All the parameters needed in this process are determined by the device structure rather than optimization methods.This guarantees consistency between the parameter values and the component’s physical meaning.

引用

页码：34 / 38

页数：5

共 9 条

[1] Methodology for small-signal model extraction of AlGaN HEMTs. Shealy J R,Wang J,Brown R. IEEE Transactions on Electron Devices . 2008
[2] A reliable optimization-based model parameter extraction approach for GaAs-based FET‘s using measurement-correlated parameter starting values. Mwema W. . 2002
[3] A new pinched-off cold-FET method to determine parasitic capacitances of FET equivalent circuits. Yeong-Lin Lai,Kuo-Hua Hsu. IEEE Transactions on Microwave Theory and Techniques . 2001
[4] A New Small-Signal Modeling Approach Applied to GaN Devices. Jarndal A,Kompa G. IEEE Transaction on Microwave Theory and Techniques . 2005
[5] Improved equivalent circuit for determination of MESFET and HEMT parasitic capacitances from "Coldfet" measurements. White P M,Healy R M. IEEE Microwave and Guided Wave Letters . 1993
[6] A new method for determining the FET small-signal equivalent circuit. Dambrine G,Cappy A,Heliodore F,et al. IEEE Transactions on Microwave Theory and Techniques . 1988
[7] An introduced neural network-differential evolution model for small-signal modeling of PHEMTs. Tayel M B,Yassin A H. International Conference on Electronic Computer Technology . 2009
[8] A new and reliable direct parameter extraction method for MESFETs and HEMTs. Tayrani R,Gerber J E,Daniel T,et al. Proceedings of 23rd European Microwave conference . 1993
[9] A new small-signal modeling and extraction method in AlGaN/GaN HEMTs. Lu Jing,Wang Yan,Ma Long,et al. Solid State Electronics . 2008

← 1 →