Study of InAIAs/InGaAs/lnP Heterostructure Multilayers by Double-Crystal X-ray Diffraction

被引：0

作者：

王超英

吴兰生

江潮

麦振洪

黄绮

周钧铭

机构：

[1] Institute of Physics Academia Sinica Beijing PRC

[2] Institute of Physics Academia Sinica Beijing PRC

来源：

ChineseScienceBulletin | 1993年 / 14期

关键词：

X-ray diffraction; multilayer;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

<正> 1 Introduction AlxGa1-xAs/GaAs heterostructure material in high electronic mobility transistors （HEMT） shows good character of high frequency. However, its further application is confined by the small conduct-band discontinuity, low two-dimensional carrier concentration and low saturation velocity of carriers, etc. The coherence heterostructural system, In0.52Al0.48As/In0.53 Ga0.47As, has no AlGaAs layer and is free from low temperature sustained photoconductivity. Moreover, in this system the mole fraction of In increases greatly, so

引用

页码：1163 / 1167

页数：5