Chemical Thermodynamic Analysis of Silicon Doping in MOCVD of GaAs System

被引：1

作者：

任红文

蒋民华

刘立强

黄柏标

机构：

[1] Institute of Crystal Materials Shandong University

[2] Jinan

[3] China

[4] Institute of Crystal Materials

[5] Shandong University

来源：

Rare Metals | 1993年 / 02期

关键词：

Chemical thermodynamics; Equilibrium; Si doping; GaAs; MOCVD;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

<正> With chemical thermodynamic method,enthalpies,entropies and heat capacities of（SiH3）_nAsH3-n（1≤n≤3）,（CH3）mSiH4-m（1≤m≤4）and their radicals were calculated.Homogeneous reactions equilibrium of 65gas phase species in SiH4（or Si2H6）doped MOCVD GaAs by TMG and AsH3 system was analyzed,the re-lations of gas phase partial pressures with growth temperatures and input partial pressures were calculated.When the gas phase is saturated with a GaAs:Si solid,the gas phase partial pressures and solid phase siliconimpurity(SiGa-As,Ga-SiAs,SiGa-SiAs)concentrations were calculated under different growth temperatures andinput partial pressures.With the above results,some of the Si doping behavior in MOCVD of GaAs are ex-plained.

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页码：121 / 125

页数：5

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