Chemical Thermodynamic Analysis of Silicon Doping in MOCVD of GaAs System

With chemical thermodynamic method,enthalpies,entropies and heat capacities of(SiH)AsH(1≤n≤3),(CH)SiH(1≤m≤4)and their radicals were calculated.Homogeneous reactions equilibrium of 65gas phase species in SiH(or SiH)doped MOCVD GaAs by TMG and AsHsystem was analyzed,the re-lations of gas phase partial pressures with growth temperatures and input partial pressures were calculated.When the gas phase is saturated with a GaAs:Si solid,the gas phase partial pressures and solid phase siliconimpurity(Si-As,Ga-Si,Si-Si)concentrations were calculated under different growth temperatures andinput partial pressures.With the above results,some of the Si doping behavior in MOCVD of GaAs are ex-plained.