Effect of roughness and wettability of silicon wafer in cavitation erosion

被引:0
作者
JIANG NaNa LIU ShiHan CHEN DaRong State Key Laboratory of Tribology Tsinghua University Beijing China [100084 ]
机构
关键词
cavitation erosion; silicon wafer; roughness; contact angle;
D O I
暂无
中图分类号
O485 [表面物理学];
学科分类号
070205 ; 0805 ; 080502 ; 0809 ;
摘要
Material damage of silicon wafer with different roughness and wettability was investigated by using the self-made vibration cavitation apparatus in de-ionized water. Various roughness and wettability of sili- con wafer were achieved by changing their morphology and depositing Au, diamond-like carbon films (DLC films) on them. Surface morphology was observed with a scanning electron microscope (SEM) and a surface profilometer, and wettability was characterized by the contact angle measurement. The cavitation erosion results showed that many tiny pits and cracks appeared on the wafer surface as a result of brittle fractures; the number and size of the pits and cracks increased with experiment time, which made material flake away finally; cavitation occurred more easily on the silicon wafer surface with the augment of roughness or contact angle by changing surface morphology or depositing Au, DLC thin film on it, which consequently aggravated cavitation damage.
引用
收藏
页码:2879 / 2885
页数:7
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