Properties of fluorescence based on the immobilization of graphene oxide quantum dots in nanostructured porous silicon films

被引：0
|
作者：
蕾何 [1 ]
贾振红 [2 ]
周骏 [3 ]
机构：
[1] School of Physical Science and Technology,Xinjiang University
[2] School of Information Science and Engineering,Xinjiang University
[3] Department of Physics,Ningbo University
来源：
ChineseOpticsLetters | 2016年 / 14卷 / 04期
基金：
中国国家自然科学基金;
关键词：
QDs; Properties of fluorescence based on the immobilization of graphene oxide quantum dots in nanostructured porous silicon films;
D O I：
暂无
中图分类号：
O471.1 [半导体量子理论]; O484 [薄膜物理学];
学科分类号：
070205 ; 080501 ; 0809 ; 080903 ; 1406 ;
摘要：
The fluorescence of grapliene oxide quantum dots(GOQDs) that are infiltrated into porous silicon(PSi) is investigated. By dropping activated GOQDs solution onto silanized PSi samples. GOQDs are successfully in?filtrated into a PSi device. The results indicate that the intensity of the fluorescence of the GOQD-infiltrated multilayer with a high reflection band located at its fluorescence spectra scope is approximately double that of the single layer sample. This indicates that the multilayer GOQD-infiltrated PSi substrate is a suitable material for the preparation of sensitive photoluminescence biosensors.
引用
收藏
页码：46 / 49
页数：4
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