Dependence of third-order nonlinear susceptibility on strain induced piezoelectric field in InxGa1-xN/GaN quantum well

被引：0
|
作者：
白瑶晨
刘景良
姚端正
机构：
[1] School of Physics and Technology
[2] Wuhan 430072
[3] Wuhan University
来源：
Chinese Optics Letters | 2004年 / 01期
关键词：
GaN; x)N/GaN quantum well; Dependence of third-order nonlinear susceptibility on strain induced piezoelectric field in In_xGa; ISBT;
D O I：
暂无
中图分类号：
O413.1 [量子力学（波动力学、矩阵力学）];
学科分类号：
070205 ; 0809 ;
摘要：
The third-order susceptibility of InxGa1-xN/GaN quantum well (QW) has been investigated by taking into account the strain-induced piezoelectric (PZ) field, and the effective-mass Schrodinger equation is solved numerically. It is shown that the third-order susceptibility for third harmonic generation (THG) of InxGa1-xN/GaN QW is related to indium content in QW and the intensity of the PZ field. Thecharacteristics of xTHG(3) (-3ω, ω, ω,ω ) as the function of the wavelength of incident beam, well width and indium content, have been analyzed.
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收藏
页码：50 / 52
页数：3
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