Laser direct writing pattern structures on AgInSbTe phase change thin film

被引：0

作者：

顿爱欢 ^{[1
,2
]}

魏劲松 ^{[1
]}

干福熹 ^{[1
]}

机构：

[1] Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences

[2] Graduate University of Chinese Academy of Sciences

来源：

Chinese Optics Letters | 2011年 / 9卷 / 08期

基金：

中国国家自然科学基金;

关键词：

AIST; Laser direct writing pattern structures on AgInSbTe phase change thin film; AFM; line; Figure;

D O I：

暂无

中图分类号：

TN249 [激光的应用];

学科分类号：

0803 ; 080401 ; 080901 ;

摘要：

Different pattern structures are obtained on the AgInSbTe(AIST) phase change film as induced by laser beam.Atomic force microscopy(AFM) was used to observe and analyze the different pattern structures.The AFM photos clearly show the gradually changing process of pattern structures induced by different threshold effects,such as crystallization threshold,microbump threshold,melting threshold,and ablation threshold.The analysis indicates that the AIST material is very effective in the fabrication of pattern structures and can offer relevant guidance for application of the material in the future.

引用

页码：75 / 78

页数：4

共 3 条

[1] Formation of high-aspect-ratio protrusions on gold films by localized pulsed laser irradiation
Moening, Joseph P.
Thanawala, Sachin S.
Georgiev, Daniel G.
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 95 (03): : 635 - 638
[2] Temperature dependence of thermal properties of Ag 8 In 14 Sb 55 Te 23 phase-change memory materials[J] . Xinbing Jiao,Jingsong Wei,Fuxi Gan,Mufei Xiao.Applied Physics A . 2009 (3)
[3] Phase change materials: From material science to novel storage devices[J] . M. Wuttig,C. Steimer.Applied Physics A . 2007 (3)

← 1 →