Structural and electrical properties of reactive magnetron sputtered yttrium-doped HfO2 films

被引：0

作者：

张昱 ^{[1
]}

徐军 ^{[1
]}

周大雨 ^{[2
]}

王行行 ^{[1
]}

陆文琪 ^{[1
]}

Chi-Kyu Choi ^{[3
]}

机构：

[1] Key Laboratory of Materials Modification by Laser,Ion and Electron Beams,Ministry of Education,School of Physics,Dalian University of Technology

[2] School of Materials Science and Engineering,Dalian University of Technology

[3] Department of Physics,Jeju National University

来源：

Chinese Physics B | 2018年 / 04期

基金：

中央高校基本科研业务费专项资金资助; 中国国家自然科学基金;

关键词：

Y-doped HfO2; ultra-thin film; high-k; x-ray photoelectron spectrum;

D O I：

暂无

中图分类号：

O484 [薄膜物理学];

学科分类号：

080501 ; 1406 ;

摘要：

Hafnium oxide thin films doped with different concentrations of yttrium are prepared on Si(100) substrates at room temperature using a reactive magnetron sputtering system.The effects of Y content on the bonding structure,crystallographic structure,and electrical properties of Y-doped HfO2films are investigated.The x-ray photoelectron spectrum(XPS) indicates that the core level peak positions of Hf 4 f and O 1 s shift toward lower energy due to the structure change after Y doping.The depth profiling of XPS shows that the surface of the film is completely oxidized while the oxygen deficiency emerges after the stripping depths have increased.The x-ray diffraction and high resolution transmission electron microscopy(HRTEM) analyses reveal the evolution from monoclinic HfO2phase towards stabilized cubic HfO2phase and the preferred orientation of(111) appears with increasing Y content,while pure HfO2shows the monoclinic phase only.The leakage current and permittivity are determined as a function of the Y content.The best combination of low leakage current of 10-7 A/cm~2 at 1 V and a highest permittivity value of 29 is achieved when the doping ratio of Y increases to 9 mol%.A correlation among Y content,phase evolution and electrical properties of Y-doped HfO2ultra-thin film is investigated.

引用

页码：518 / 523

页数：6