共 1 条
- [1] GaN growth using GaN buffer layer .2 Nakamura S. Jpn. J. Appl. Phys . 1991
Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates
被引：0
作者：
汪连山
刘祥林
昝育德
汪度
王俊
陆大成
王占国
机构：
关键词：
fabrication of GaN epitaxial films;
Al2O3/Si（001） substrate;
metalorganic chemical deposition;
cry\| stal structure and surface morphology;
photoluminescence spectrum;
D O I：
暂无
中图分类号：
TN304.055 [];
学科分类号：
0805 ;
080501 ;
080502 ;
080903 ;
摘要：
Single crystal GaN films of hexagonal modification have been fabricated on Al2O3/Si （001） substrates via a low pressure metalorganic chemical deposition （LP-MOCVD） method. The full width at half-maximum of （0002） X-ray diffraction peak for the GaN film 1.1 μm thick was 72 arcmin, and the mosaic structure of the film was the main cause of broadening to the X-ray diffraction peak. At room temperature, the photoluminescence （PL） spectrum of GaN exhibited near band edge emission peaking at 365 nm.
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页码：203 / 207
页数：5
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