New Bi-metallic Single Source Precursors for the Deposition of Thin Films of Semiconductor Ceramics

被引：0
|
作者：
U．Salma [1 ]
M．Mazhar [1 ]
J.I.Akhter [2 ]
Z.Ali [2 ]
机构：
[1] Department of Chemistry,Quaid-i-Azam University,Islamabad 45320,Pakistan
[2] Physics Division,Pakistan Institute of Nuclear Science and Technology,P．O．Nilore,Islamabad,Pakistan
来源：
Journal of Materials Science & Technology | 2007年 / 02期
关键词：
Single source precursors; CCCVD; Organotin carboxylates;
D O I：
暂无
中图分类号：
TN304 [材料];
学科分类号：
摘要：
Stable binary single source precursors (SSP) for the deposition of thin films of ceramic semiconductors of composition SnO·GeO were synthesized by close circuit chemical vapour deposition (CCCVD) method. Elemental analysis and spectroscopic techniques were used to characterize the precursors. Scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were employed to characterize the thin films. Resistivity measurements were conducted to show that the films are of semiconducting nature.
引用
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页码：196 / 200
页数：5
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