Investigation of L10 FePt-based soft/hard composite bit-patterned media by micromagnetic simulation
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作者:
王颖
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机构:
Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education,Lanzhou UniversityKey Laboratory for Magnetism and Magnetic Materials of the Ministry of Education,Lanzhou University
王颖
[1
]
韦丹
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机构:
Laboratory of Advanced Materials,Department of Materials Science and Engineering,Tsinghua UniversityKey Laboratory for Magnetism and Magnetic Materials of the Ministry of Education,Lanzhou University
韦丹
[2
]
曹江伟
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机构:
Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education,Lanzhou UniversityKey Laboratory for Magnetism and Magnetic Materials of the Ministry of Education,Lanzhou University
曹江伟
[1
]
魏福林
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机构:
Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education,Lanzhou UniversityKey Laboratory for Magnetism and Magnetic Materials of the Ministry of Education,Lanzhou University
魏福林
[1
]
机构:
[1] Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education,Lanzhou University
[2] Laboratory of Advanced Materials,Department of Materials Science and Engineering,Tsinghua University
micromagnetic simulation;
composite bit patterned media;
L10;
FePt;
switching field distribution;
readout signal;
D O I:
暂无
中图分类号:
O441.2 [磁学];
学科分类号:
0809 ;
摘要:
The soft/hard composite patterned media have potential to be the next generation of magnetic recording,but the composing modes of soft and hard materials have not been investigated systematically.L10 Fe Pt-based soft/hard composite patterned media with an anisotropic constant distribution are studied by micromagnetic simulation.Square arrays and hexagonal arrays with various pitch sizes are simulated for two composing types:the soft layer that encloses the hard dots and the soft layer that covers the whole surface.It is found that the soft material can reduce the switching fields of bits effectively for all models.Compared with the first type,the second type of models possess low switching fields,narrow switching field distributions,and high gain factors due to the introduction of inter-bit exchange coupling.Furthermore,the readout waveforms of the second type are not deteriorated by the inter-bit soft layers.Since the recording density of hexagonal arrays are higher than that of square arrays with the same center-to-center distances,the readout waveforms of hexagonal arrays are a little worse,although other simulation results are similar for these two arrays.
机构:
Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, JapanNatl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
Varaprasad, B. S. D. Ch. S.
Chen, M.
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机构:
Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058577, JapanNatl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
Chen, M.
Takahashi, Y. K.
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Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, JapanNatl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
Takahashi, Y. K.
Hono, K.
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机构:
Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058577, JapanNatl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
机构:
Data Storage Inst, Off Kent Ridge Crescent, NUS, Singapore 117608, SingaporeData Storage Inst, Off Kent Ridge Crescent, NUS, Singapore 117608, Singapore
Hu, J. F.
Chen, J. S.
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机构:
Data Storage Inst, Off Kent Ridge Crescent, NUS, Singapore 117608, Singapore
Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117576, SingaporeData Storage Inst, Off Kent Ridge Crescent, NUS, Singapore 117608, Singapore
Chen, J. S.
Lim, B. C.
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机构:
Data Storage Inst, Off Kent Ridge Crescent, NUS, Singapore 117608, SingaporeData Storage Inst, Off Kent Ridge Crescent, NUS, Singapore 117608, Singapore
Lim, B. C.
Zhou, T. J.
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机构:
Data Storage Inst, Off Kent Ridge Crescent, NUS, Singapore 117608, SingaporeData Storage Inst, Off Kent Ridge Crescent, NUS, Singapore 117608, Singapore
机构:
NUS, A STAR Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, Singapore
Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117574, SingaporeNUS, A STAR Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, Singapore
Cher, K. M.
Lim, B. C.
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机构:
NUS, A STAR Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, SingaporeNUS, A STAR Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, Singapore
Lim, B. C.
Hu, J. F.
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机构:
NUS, A STAR Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, SingaporeNUS, A STAR Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, Singapore
Hu, J. F.
Lwin, P. W.
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机构:
NUS, A STAR Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, SingaporeNUS, A STAR Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, Singapore
Lwin, P. W.
Zhou, T. J.
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机构:
NUS, A STAR Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, SingaporeNUS, A STAR Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, Singapore
Zhou, T. J.
Chen, J. S.
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机构:
Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117574, SingaporeNUS, A STAR Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, Singapore