A low power V-band LC VCO with high Q varactor technique in 40 nm CMOS process

被引：0

作者：

Qian ZHOU ^{[1
]}

Yan HAN ^{[1
]}

Shifeng ZHANG ^{[1
]}

Xiaoxia HAN ^{[1
]}

Lu JIE ^{[1
]}

Ray C.C.CHEUNG ^{[2
]}

Guangtao FENG ^{[3
]}

机构：

[1] College of Information Science and Electronic Engineering, Zhejiang University

[2] Department of Electronic Engineering, City University of Hong Kong

[3] Semiconductor Manufacturing International Corporation

来源：

ScienceChina(InformationSciences) | 2017年 / 60卷 / 08期

关键词：

VCO; A low power V-band LC VCO with high Q varactor technique in 40 nm CMOS process; CMOS; in; high; nm; LC; with;

D O I：

暂无

中图分类号：

TN752 [振荡器];

学科分类号：

080904 ;

摘要：

Dear editor,Demand for higher data transmission rate,particularly in the modern communication systems,has been increasing over the years.For example,the IEEE standard 802.15.3c specifies more than2 Gbps data transmission rate,which pushes the frequency band up to 60 GHz.In the transceiver,the working frequency of VCO is in 60 GHz,and that has attracted many people to study it[1,2].However,implementing high speed voltagecontrolled oscillator(VCO)through CMOS technology can be extremely challenging because of the

引用

页码：252 / 254

页数：3

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