Residual Stress Measurement for Ion-implanted NiTi Alloy by Using Moiré Interferometry and Hole-drilling Combined Method

被引：1

作者：

WANG QiangabWANG BiaoacMA DecaiaDAI Fulongd aSchool of AstronauticsHarbin Institute of TechnologyHarbin China bCollege of Physical Science and TechnologyHeilongjiang University Harbin China cState Key Laboratory of Optoelectronic Materials and TechnologiesInstitute of Optoelectronic and Functional Composite Materialsand School of Physics Science and EngineeringSun Yatsen UniversityGuangzhou China dDepartment of Engineering MechanicsTsinghua University Beijing China ^{[150001
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机构：

来源：

Chinese Journal of Aeronautics | 2006年 / S1期

关键词：

ion implantation; residual stress; Moiré; interferometry; hole-drilling;

D O I：

暂无

中图分类号：

V257 [金属和非金属复合材料];

学科分类号：

0805 ; 080502 ;

摘要：

Residual stresses in ion-implanted NiTi alloy are measured by a combined method of Moiré interferometry and hole-drilling. Oxy-gen ions are implanted into the NiTi alloy under a voltage of 30 kV by a dose of 1.0×1017 ions/cm2 for one hour. Subsequently, in order to avoid dimensional error, a hole is drilled exactly in the center of the sample. The distribution of residual stresses around the hole is measured. It is indicated that the method which combines the Moiré interferometry with hole-drilling is able to be used to measure resid-ual stresses produced by ion implantation.

引用

页码：23 / 26

页数：4