Study on the Structure and Properties of Ordered Conductive Polymer Ultrathin Film
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郑华靖
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蒋亚东
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State Key Laboratory of Electronic Thin Films & Integrated Devices,School of Optoelectronic Information,University of Electronic Science and Technology of ChinaState Key Laboratory of Electronic Thin Films & Integrated Devices,School of Optoelectronic Information,University of Electronic Science and Technology of China
蒋亚东
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徐建华
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杨亚杰
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State Key Laboratory of Electronic Thin Films & Integrated Devices,School of Optoelectronic Information,University of Electronic Science and Technology of ChinaState Key Laboratory of Electronic Thin Films & Integrated Devices,School of Optoelectronic Information,University of Electronic Science and Technology of China
杨亚杰
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]
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[1] State Key Laboratory of Electronic Thin Films & Integrated Devices,School of Optoelectronic Information,University of Electronic Science and Technology of China
A Langmuir-Blodgett (LB) inducing method was firstly used to prepare single layer and multilayer conducting composite PEDOT-PSS film. The film-forming ability of ionization ODA and ODA-SA monolayer spread on PEDOT-PSS nanoparticle sub-phase and the behavior of ODA/PEDOT-PSS assembly particles on pure water were firstly investigated. The results indicated that nanoparticles in the suphase are packed in the ionization monolayer and stable complex Langmuir film is formed at the air/water interface. It has been found that the best film-forming conditions for composite film are as follows:distinct interface was formed between ODA and PEDOT-PSS layer and single layer thickness of PEDOT-PSS was about 23 nm,well accordant to the size of PEDOT-PSS nanoparticles. Different structures were designed to test the conductive ability of these composite films and a variable range hopping (VRH) model was used to explain the film conductive mechanism. The results indicated that a 3D-VRH model explained well the transferring of charge carrier in the multilayer film.
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页码:1449 / 1458
页数:10
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Hot carrier injection at semiconductor-electrolyte junctions .2 D.S.Boudreaux,F.Williams,A.J.Nozik. J of Appl.Phys . 1980