Modeling of subthreshold characteristics for undoped and doped deep nanoscale short channel double-gate MOSFETs

被引：0

作者：

靳晓诗 ^{[1
]}

刘溪 ^{[1
]}

吴美乐 ^{[1
]}

揣荣岩 ^{[1
]}

Jung-Hee Lee ^{[2
]}

Jong-Ho Lee ^{[3
]}

机构：

[1] School of Information Science and Engineering,Shenyang University of Technology

[2] School of EECS,Kyungpook National University

[3] School of EECS Eng.and ISRC(Inter-University Semiconductor Research Center),Seoul National University

来源：

Journal of Semiconductors | 2012年 / 12期

关键词：

double-gate; MOSFETs; deep nanoscale; modeling;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

A model of subthreshold characteristics for both undoped and doped double-gate(DG) MOSFETs has been proposed.The models were developed based on solution of 2-D Poisson’s equation using variable separation technique.Without any fitting parameters,our proposed models can exactly reflect the degraded subthreshold characteristics due to nanoscale channel length.Also,design parameters such as body thickness,gate oxide thickness and body doping concentrations can be directly reflected from our models.The models have been verified by comparing with device simulations’ results and found very good agreement.

引用

页码：27 / 30

页数：4

共 3 条

[1]

Novel SOI double-gate MOSFET with a P-type buried layer[J]. 姚国亮,罗小蓉,王琦,蒋永恒,王沛,周坤,吴丽娟,张波,李肇基.半导体学报. 2012(05)

[2] Characteristics of vertical double-gate dual-strained-channel MOSFETs [J].