Effect of substrate type on Ni self-assembly process

被引：0

作者：

柴旭朝 ^{[1
]}

瞿博阳 ^{[1
]}

焦岳超 ^{[1
]}

刘萍 ^{[1
]}

马彦霞 ^{[1
]}

王凤歌 ^{[1
]}

李晓荃 ^{[1
]}

方向前 ^{[1
]}

韩平 ^{[2
]}

张荣 ^{[2
]}

机构：

[1] School of Electric and Information Engineering Zhongyuan University of Technology

[2] School of Electronic Science and Engineering Nanjing University

来源：

Chinese Physics B | 2019年 / 01期

基金：

中国国家自然科学基金;

关键词：

self-assembly; thermal annealing; substrates;

D O I：

暂无

中图分类号：

TB383.1 [];

学科分类号：

070205 ; 080501 ; 1406 ;

摘要：

Ni self-assembly has been performed on Ga N(0001), Si(111) and sapphire(0001) substrates. Scanning electron microscopy(SEM) images verify that the Si(111) substrate leads to failure of the Ni assembly due to Si–N interlayer formation; the GaN(0001) and sapphire(0001) substrates promote assembly of the Ni particles. This indicates that the GaN/sapphire(0001) substrates are fit for Ni self-assembly. For the Ni assembly process on Ga N/sapphire(0001) substrates,three differences are observed from the x-ray diffraction(XRD) patterns:(i) Ni self-assembly on the sapphire(0001) needs a 900?C annealing temperature, lower than that on the GaN(0001) at 1000?C, and loses the Ni network structure stage;(ii) the Ni particle shape is spherical for the sapphire(0001) substrate, and truncated-cone for the GaN(0001) substrate; and(iii) a Ni–N interlayer forms between the Ni particles and the GaN(0001) substrate, but an interlayer does not appear for the sapphire(0001) substrate. All these differences are attributed to the interaction between the Ni and the Ga N/sapphire(0001) substrates. A model is introduced to explain this mechanism.

引用

页码：478 / 483

页数：6