共 5 条
[1]
Uchida K,Watanabe H,Kinoshita A,et al.Experimental study on carrier transport mechanism in ultrathin-body SOI n- and p-MOSFETs with SOI thickness less than 5nm. IEEE International Electron Devices Meeting . 2002
[2]
Choi Y K,Asano K,Lindert N,et al.Ultra-thin body SOI MOSFET for deep-sub-tenth micron era. International Electron Devices Meeting . 1999
[3]
Vandooren A,Egley S,Zavala M,et al.Ultra-thin body fully-depleted SOI devices with metal gate (TaSiN) gate, high K (HfO2 ) dielectric and elevated source/drain extensions. IEEE International SOI Conference . 2002
[4]
Xuan Peiqi,Kedzierski J,Subranmanian V,et al.60nm planarized ultra-thin body solid phase epitaxy MOSFETs. Conference Digest IEEE International Semiconductor Laser Conference . 2000
[5]
Choi Y K,Ha D,King T J,et al.Ultra-thin body PMOSFETs with selectively deposited Ge source/drain. 2001 Symposium on VLSI Technology . 2001