Doping Silicon Wafers with Boron by Use of Silicon Paste

被引：0

作者：

Yu Gao

Shu Zhou

Yunfan Zhang

Chen Dong

Xiaodong Pi

Deren Yang

机构：

[1] StateKeyLaboratoryofSiliconMaterials,DepartmentofMaterialsScienceandEngineering,ZhejiangUniversity

来源：

Journal of Materials Science & Technology | 2013年 / 29卷 / 07期

关键词：

Silicon nanoparticles; Silicon paste; Doping; Boron;

D O I：

暂无

中图分类号：

TN304.12 [];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

<正>In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon.Boron-doped silicon nanoparticles are synthesized by a plasma approach.They are then dispersed in solvents to form silicon paste. Silicon paste is screen-printed at the surface of silicon wafers.By annealing,boron atoms in silicon paste diffuse into silicon wafers.Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles.The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy(SIMS) and sheet resistance measurements.

引用

页码：652 / 654

页数：3

共 50 条

[31] Understanding doping in silicon nanostructures [J].

Ossicini, Stefano ;

Iori, Federico ;

Degoli, Elena ;

Luppi, Eleonora ;

Magri, Rita ;

Poli, Raffaele ;

Cantele, Giovanni ;

Trani, Fabio ;

Ninno, Domenico .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2006, 12 (06) :1585-1591

[32] Diffusion doping of silicon with magnesium [J].

Astrov, Yuri A. ;

Shuman, Valentina B. ;

Portsel, Leonid M. ;

Lodygin, Anatoly N. ;

Pavlov, Sergey G. ;

Abrosimov, Nikolay V. ;

Shastin, Valery N. ;

Huebers, Heinz-Wilhelm .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (07)

[33] A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond [J].

Linnarsson, M. K. ;

Isberg, J. ;

Schoener, A. ;

Hallen, A. .

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 :453-+

[34] Boron diffusion in amorphous silicon [J].

Venezia, VC ;

Duffy, R ;

Pelaz, L ;

Hopstaken, MJP ;

Maas, GCJ ;

Dao, T ;

Tamminga, Y ;

Graat, P .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 124 :245-248

[35] Boron Subphthalocyanines and Silicon Phthalocyanines for Use as Active Materials in Organic Photovoltaics [J].

Grant, Trevor M. ;

Josey, David S. ;

Sampson, Kathleen L. ;

Mudigonda, Thanmayee ;

Bender, Timothy P. ;

Lessard, Benoit H. .

CHEMICAL RECORD, 2019, 19 (06) :1093-1112

[36] Investigation of the parameters of layers prepared through diffusion of boron and gadolinium from silicate and hybrid films into silicon wafers [J].

Smirnova, I. V. ;

Shilova, O. A. ;

Bubnov, Yu. Z. .

GLASS PHYSICS AND CHEMISTRY, 2009, 35 (01) :102-111

[37] Investigation of the parameters of layers prepared through diffusion of boron and gadolinium from silicate and hybrid films into silicon wafers [J].

I. V. Smirnova ;

O. A. Shilova ;

Yu. Z. Bubnov .

Glass Physics and Chemistry, 2009, 35 :102-111

[38] Spectroscopic characterization of implanted boron in microcrystalline silicon by β-NMR [J].

Mai, F ;

Ittermann, B ;

Füllgrabe, M ;

Heemeier, M ;

Kroll, F ;

Marbach, K ;

Meier, P ;

Mell, H ;

Peters, D ;

Thiess, H ;

Ackermann, H ;

Stöckmann, HJ .

PHYSICA B-CONDENSED MATTER, 2001, 308 :248-252

[39] Studies of boron segregation to {311} defects in silicon-implanted silicon [J].

Xia, J ;

Saito, T ;

Kim, R ;

Aoki, T ;

Kamakura, Y ;

Taniguchi, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B) :2319-2323

[40] Capacitance-Voltage Characterization of In-situ Boron Doped Silicon Quantum Dot in Silicon Dioxide [J].

Zhang, Tian ;

Wurfl, Ivan Perez ;

Puthen-Veettil, Binesh ;

Wu, Lingfeng ;

Jia, Xuguang ;

Lin, Ziyun ;

Yang, Chien-Jen ;

Conibeer, Gavin .

2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2014, :1115-1118

← 1 2 3 4 5 →