Doping Silicon Wafers with Boron by Use of Silicon Paste

被引：0
作者：
Yu Gao
Shu Zhou
Yunfan Zhang
Chen Dong
Xiaodong Pi
Deren Yang
机构：
[1] StateKeyLaboratoryofSiliconMaterials,DepartmentofMaterialsScienceandEngineering,ZhejiangUniversity
来源：
Journal of Materials Science & Technology | 2013年 / 29卷 / 07期
关键词：
Silicon nanoparticles; Silicon paste; Doping; Boron;
D O I：
暂无
中图分类号：
TN304.12 [];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
<正>In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon.Boron-doped silicon nanoparticles are synthesized by a plasma approach.They are then dispersed in solvents to form silicon paste. Silicon paste is screen-printed at the surface of silicon wafers.By annealing,boron atoms in silicon paste diffuse into silicon wafers.Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles.The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy(SIMS) and sheet resistance measurements.
引用
收藏
页码：652 / 654
页数：3
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