Doping Silicon Wafers with Boron by Use of Silicon Paste

被引：0
|
作者：
Yu Gao [1 ]
Shu Zhou [1 ]
Yunfan Zhang [1 ]
Chen Dong [1 ]
Xiaodong Pi [1 ]
Deren Yang [1 ]
机构：
[1] State Key Laboratory of Silicon Materials,Department of Materials Science and Engineering,Zhejiang University
来源：
JournalofMaterialsScience&Technology | 2013年 / 29卷 / 07期
基金：
中国国家自然科学基金;
关键词：
Silicon nanoparticles; Silicon paste; Doping; Boron;
D O I：
暂无
中图分类号：
TN304.12 [];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon.Boron-doped silicon nanoparticles are synthesized by a plasma approach.They are then dispersed in solvents to form silicon paste. Silicon paste is screen-printed at the surface of silicon wafers.By annealing,boron atoms in silicon paste diffuse into silicon wafers.Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles.The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy(SIMS) and sheet resistance measurements.
引用
收藏
页码：652 / 654
页数：3
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