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Group III nitride semiconductor compounds,physics and applications. Popovici G. . 1999
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Electro-optical characterization of hexagonal and cubic gallium nitride for blue emitters application. Philippe A. . 1999
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Effect of photo-assisted RIE damage on GaN. MOUFFAK Z,MEDELCI N,BONEY C, et al. Internet journal of Nitride semiconductor Research . 2003
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Fundamental energy gap of GaN from photoluminescence excitation spectra. Monemar B. Physical Review B Condensed Matter and Materials Physics . 1974
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High-brightness InGaN/AlGaN double-heterostructure blue-green light-emitting diodes. Nakamura S,Mukai T,Senoh M. Journal of Applied Physics . 1994
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Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors. Wu Y F,Keller B P,Keller S,et al. Applied Physics Letters . 1996
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Ion implantation doping and isolation of GaN. Pearton, S.J.,Vartuli, C.B.,Zolper, J.C.,Yuan, C.,Stall, R.A. Applied Physics . 1995
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Large-band-gap SiC, Ⅲ-Ⅴ nitride, and Ⅱ-Ⅵ ZnSe-based semiconductor device technologies. H. Morkoc,S. Strite,G.B. Gao,et al. Journal of Applied Physics . 1994