Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique

被引：1

作者：

冯淦 ^{[1
]}

朱建军 ^{[1
]}

沈晓明 ^{[1
]}

张宝顺 ^{[1
]}

赵德刚 ^{[1
]}

王玉田 ^{[1
]}

杨辉 ^{[1
]}

梁骏吾 ^{[1
]}

机构：

[1] State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

来源：

Science in China(Series G) | 2003年 / 04期

基金：

中国国家自然科学基金;

关键词：

GaN; X-ray diffraction; thickness;

D O I：

暂无

中图分类号：

O434.12 [探测与量度];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper we propose a new method for measuring the thickness of the GaN epilayerby using the ratio of the integrated intensity of the GaN epilayer X-ray diffraction peaks to that ofthe sapphire substrate ones.This ratio shows a linear dependence on the GaN epilayer thicknessup to 2μm.The new method is more accurate and convenient than those of using the relationshipbetween the integrated intensity of GaN epilayer diffraction peaks and the GaN thickness.Besides,it can eliminate the absorption effect of the GaN epilayer.

引用

页码：437 / 440

页数：4

共 50 条

[41] Evaluation of strain balancing layer thickness for InAs/GaAs quantum dot arrays using high resolution x-ray diffraction and photoluminescence
Bailey, Christopher G.
Hubbard, Seth M.
Forbes, David V.
Raffaelle, Ryne P.
APPLIED PHYSICS LETTERS, 2009, 95 (20)
[42] High resolution X-ray diffraction, X-ray multiple diffraction and cathodoluminescence as combined tools for the characterization of substrates for epitaxy: the ZnO case
Martinez-Tomas, M. C.
Hortelano, V.
Jimenez, J.
Wang, B.
Munoz-Sanjose, V.
CRYSTENGCOMM, 2013, 15 (19): : 3951 - 3958
[43] Recognition of domain patterns using high-resolution single crystal X-ray diffraction
Gorfman, Semen
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2021, 77 : C743 - C743
[44] Structural Analysis of InAs1-xSbx Epilayer Considering Occurrence of Crystallographic Tilt Exploiting High-Resolution X-Ray Diffraction
Jung, In-Young
Choi, Minhyuk
Kim, Jeongtae
More, Vivek Mohan
Lee, Sang Jun
Kim, Eun Kyu
Kim, Chang-Soo
Song, Seungwoo
ELECTRONIC MATERIALS LETTERS, 2022, 18 (02) : 205 - 214
[45] Structural Analysis of InAs1−xSbx Epilayer Considering Occurrence of Crystallographic Tilt Exploiting High-Resolution X-Ray Diffraction
In-Young Jung
Minhyuk Choi
Jeongtae Kim
Vivek Mohan More
Sang Jun Lee
Eun Kyu Kim
Chang-Soo Kim
Seungwoo Song
Electronic Materials Letters, 2022, 18 : 205 - 214
[46] Determination of twist angle of in-plane mosaic spread of GaN films by high-resolution X-ray diffraction
Zheng, XH
Chen, H
Yan, ZB
Han, YJ
Yu, HB
Li, DS
Huang, Q
Zhou, JM
JOURNAL OF CRYSTAL GROWTH, 2003, 255 (1-2) : 63 - 67
[47] The three dimensional X-ray diffraction technique
Jensen, D. Juul
Poulsen, H. F.
MATERIALS CHARACTERIZATION, 2012, 72 : 1 - 7
[48] Nondestructive measurement of layer thickness in double heterostructures by X-ray double crystal diffraction
Qu, Y
Li, XQ
Song, XW
Zhang, XD
Wang, L
Qie, XP
THIRD INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 1998, 3175 : 378 - 380
[49] X-ray diffraction measurement at 0.20 K
Naher, S
Suzuki, H
Mizuno, M
Xue, Y
Fujishita, H
PHYSICA B-CONDENSED MATTER, 2003, 329 : 1612 - 1613
[50] High-resolution X-ray diffraction to probe quantum dot asymmetry
Serafinczuk, J.
Rudno-Rudzinski, W.
Gawelczyk, M.
Podemski, P.
Parzyszek, K.
Piejko, A.
Sichkovskyi, V.
Reithmaier, J. P.
Sek, G.
MEASUREMENT, 2023, 221

← 1 2 3 4 5 →