Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique

被引：1

作者：

冯淦 ^{[1
]}

朱建军 ^{[1
]}

沈晓明 ^{[1
]}

张宝顺 ^{[1
]}

赵德刚 ^{[1
]}

王玉田 ^{[1
]}

杨辉 ^{[1
]}

梁骏吾 ^{[1
]}

机构：

[1] State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

来源：

Science in China(Series G) | 2003年 / 04期

基金：

中国国家自然科学基金;

关键词：

GaN; X-ray diffraction; thickness;

D O I：

暂无

中图分类号：

O434.12 [探测与量度];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper we propose a new method for measuring the thickness of the GaN epilayerby using the ratio of the integrated intensity of the GaN epilayer X-ray diffraction peaks to that ofthe sapphire substrate ones.This ratio shows a linear dependence on the GaN epilayer thicknessup to 2μm.The new method is more accurate and convenient than those of using the relationshipbetween the integrated intensity of GaN epilayer diffraction peaks and the GaN thickness.Besides,it can eliminate the absorption effect of the GaN epilayer.

引用

页码：437 / 440

页数：4

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