Accurate Determination for the Energy & Temperature Dependence of Electron Capture CrossSection of Si-SiO2 Interface States Using a New Method

被引：0

作者：

陈开茅

武兰清

许慧英

刘鸿飞

机构：

[1] Beijing Institute for Nonferrous Metals Beijing 100088 PRC)

[2] Department of Physics Peking University Beijing 100871 PRC

[3] Department of Physics Peking University Beijing 100871 PRC

来源：

Science China Mathematics | 1993年 / 11期

关键词：

the capacitance transient of the carrier filling; charge-potential feedback effect; Si-SiO2; interface; temperature and energy dependence of the capture cross-section of the interface states;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation in the carrier filling capacitance transient, and full consideration is given to the charge-potential feedback effect on carrier capture process. A simplified calculation of the effect is also given. The interface states have been investigated with this technique at the Si-SiOinterface in an n-type Si MOS diode. The results show that the electron capture cross-section strongly depends on both temperature and energy.

引用

页码：1397 / 1408

页数：12