Surface Morphology and Photoluminescence of 1.3 μm Wavelength In(Ga)As/GaAs Quantum Dots

被引：0
作者：
WEI Quan xiang NIU Zhi chuan Deptof PhysShanxi University Taiyuan CHN NatLabfor Superlattices and MicrostructuresInstitute of Semiconductors Chinese Academy of Sciences Beijing CHN [1 ,2 ,1 ,30006 ,2 ,100083 ]
机构：
来源：
Semiconductor Photonics and Technology | 2003年 / 01期
关键词：
Quantum dot; Molecular beam epitaxy; Photoluminescence CLC number:TN248.4 Document code:;
D O I：
暂无
中图分类号：
TN304.055 [];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
Self-organized In 0.5 Ga 0.5 As/GaAs quantum island structure emitting at 1.35 μm at room temperature has been successfully fabricated by molecular beam epitaxy (MBE) via cycled (InAs) 1/(GaAs) 1 monolayer deposition method. Photoluminescence (PL) measurement shows that very narrow PL linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In 0.5 Ga 0.5 As islands structure. Our results provide important information for optimizing the epitaxial structures of 1.3 μm wavelength quantum dot (QD) devices.
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页码：30 / 33
页数：4
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