Applying Silver Tellurite to Optimize Ag/Si Contact Interface in Silicon Solar Cells

被引：0

作者：

LIU Jian ^{[1
]}

ZHAO Qing-He ^{[1
]}

YANG Lu-Yi ^{[1
]}

LIN Yuan ^{[1
]}

PAN Feng ^{[1
]}

机构：

[1] School of Advanced Materials, Peking University,Shenzhen Graduate School

来源：

ChineseJournalofStructuralChemistry | 2020年 / 39卷 / 03期

关键词：

silver tellurite; solar cell; silicon nitride; Ag-Si contact; solar cell efficiency;

D O I：

10.14102/j.cnki.0254-5861.2011-2779

中图分类号：

TM914.4 [太阳能电池]; O614.122 [银Ag];

学科分类号：

070301 ; 080502 ; 081704 ;

摘要：

Nowadays, researches on developing new etching materials to optimize the Ag/Si contact interface in silicon solar cells（SSCs） are rare, which alleviates the further development of SSCs. In this study, silver tellurite(Ag;TeO;, monoclinic, P21/a（14）) is synthesized and developed as an excellent etching material in SSCs. The Ag;TeO;displays a low starting temperature of etching Si;N;of ～545 °C, which is ～160 °C lower than that of PbO. Besides, by applying Ag;TeO;, conductive silver nanoparticles with a length of about 300～500 nm and a thickness of ～50 nm form in the Ag/Si contact interface, which effectively reduces the Ag-Si contact resistance, and leads to a high solar cell efficiency of ～18.4%. This study opens a new window for further enhancing the solar cell efficiency in the future.

引用

页码：395 / 400

页数：6

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