RADIATION EFFECT ON FLUORINATED SiO2 FILMS

被引：0
|
作者：
张国强
严荣良
余学锋
高文钰
任迪远
赵元富
胡浴红
王英民
机构：
来源：
Nuclear Science and Techniques | 1994年 / 02期
关键词：
Threshold voltage; Oxide trapped charge; Interface state; Radiation;
D O I：
暂无
中图分类号：
O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
ＲＡＤＩＡＴＩＯＮＥＦＦＥＣＴＯＮＦＬＵＯＲＩＮＡＴＥＤＳｉＯ＿２ＦＩＬＭＳ￥ＺｈａｎｇＧｕｏｑｉａｎｇ（张国强）；ＹａｎＲｏｎｇｌｉａｎｇ（严荣良）；ＹｕＸｕｅｆｅｎｇ（余学锋）；ＧａｏＷｅｎｙｕ（高文钰）；ＲｅｎＤｉｙｕａｎ（任迪远）（Ｘｉｎｊｉ...
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页码：124 / 128
页数：5
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