ResearchandDesignofGe0.6Si0.4/SiStrained-layerSuperlatticePlanarOpticalWaveguide

Calculation shows that the refraction index of Ge 0.6 Si 0.4 /Si strained layer superlattice n ≈3.64, when L w=9 nm and L b=24 nm. An algorithm of numerical iteration for effective refraction index is employed to obtain different effective refraction indexes at different thickness ( L ). As a result, the thickness of Ge 0.6 Si 0.4 /Si strained layer superlattice optical waveguide, L ≤363 nm, can be determined, which is very important for designing waveguide devices. An optical waveguide can be made into a nanometer device by using Ge 0.6 Si 0.4 /Si strained layer superlattice.