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STUDYOFZn,Zn-CdDIFFUSIONINInxGa1-xAs
被引：0
作者：
张桂成
杨易
机构：
[1] Shanghai Institute of Metallurgy Academia Sinica
[2] Shanghai Institute of Metallurgy
[3] Academia Sinica
关键词：
Semiconductor physics;
Diffusion;
InGaAs;
D O I：
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摘要：
<正> In this report,the diffusion of Zn,Zn-Cd in InxGa1-xAs is investigated using ZnAs2and ZnAs2+Cd as diffusion sources.The effect of the diffusion temperature,diffusion time,a variety of the diffusion source andcomposition x of the material on the relation of the(Xj-t1/2)are given.The diffusion velocity Xj2/t of Zn inInxGa1-xAs is faster than that of Zn-Cd in InxGa1-xAs,and at 500-600℃,the surface acceptorconcentration is from 1×1019to 2×1020cm-3,which is higher than that of Zn in InP.Reduction ofcontact resistance by use of InxGa1-xAs contact layer for 1.3μm LED can be expected.
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页码：47 / 52
页数：6
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