THE ROLE OF HYDROGEN IN Er-IMPLANTED a-SiOx:H

被引：0

作者：

C.Y. Chen

W.D. Chen

Y.Q. Wang

J.J. Liang

Z.G. Xu

机构：

来源：

Acta Metallurgica Sinica(English Edition) | 2002年 / 01期

基金：

中国国家自然科学基金;

关键词：

photoluminescence; hydrogen; erbium;

D O I：

暂无

中图分类号：

O484.1 [薄膜的生长、结构和外延];

学科分类号：

080501 ; 1406 ;

摘要：

A systematic investigation of the role of hydrogen in hydrogenated amorphous substo-ichiometric silicon oxide films (a-SiO:H) implanted with erbium is presented. The experimental results show that Er3+ luminescence increases with annealing tempera-ture up to 535℃ and then drop sharply. Our work suggests that hydrogen evolution during annealing below 535℃ results in a reduction of defects in the films, and hence an improved Er3+ emission.

引用

页码：87 / 90

页数：4