Far-infrared absorption studies of Be acceptors in δ-doped GaAs/AlAs multiple quantum wells

被引：0

作者：

M. P. Halsall ^{[1
]}

P. Harrison ^{[2
]}

M. J. Steer ^{[3
]}

机构：

[1] School of Physics and Astronomy, the University of Manchester,Manchester M60 1QD, U. K.

[2] School of Electronic and Electrical Engineering, University of Leeds,LS2 9JT, U. K.

[3] EPSRC Ⅲ-V Semiconductor Central Facility, Department of Electronic and Electrical Engineering, University of Sheffield,S1 3JD, U. K.

来源：

Science China(Physics,Mechanics & Astronomy) | 2006年 / 06期

关键词：

shallow acceptor impurities; δ-doped; GaAs/AlAs multiple quantum wells; far-infrared absorp-tions;

D O I：

暂无

中图分类号：

O472.3 [];

学科分类号：

070205 ; 080501 ; 0809 ; 080903 ;

摘要：

We report a far-infrared absorption study of internal transitions of shallow Be acceptors in both bulk GaAs and a series of δ-doped GaAs/AlAs multiple quantum well samples with well thicknesses of 20,15 and 10 nm. Low temperature far-infrared absorp-tion measurements clearly show three principal absorption lines due to transitions of Be-acceptor states from the ground state to the first three odd-parity excited states,respec-tively. Using a variational principle,the 2p-1s transition energies of quantum confined Be acceptors are calculated as a function of the well width. It is found that the theoretical calculation of the 2pz → 1s transitions is in good agreement with the D-like line experi-mental data.

引用

页码：702 / 708

页数：7