Universal trench design method for a high-voltage SOI trench LDMOS

The design method for a high-voltage SOI trench LDMOS for various trench permittivities,widths and depths is introduced.A universal method for efficient design is presented for the first time,taking the trade-off between breakdown voltage（BV） and specific on-resistance(R;) into account.The high-/:（relative permittivity） dielectric is suitable to fill a shallow and wide trench while the low-k dielectric is suitable to fill a deep and narrow trench.An SOI LDMOS with a vacuum trench in the drift region is also discussed.Simulation results show that the high FOM BV;/R;can be achieved with a trench filled with the low-k dielectric due to its shortened cell-pitch.