Near-infrared lead chalcogenide quantum dots:Synthesis and applications in light emitting diodes

被引：2

作者：

刘皓宸 ^{[1
]}

钟华英 ^{[1
]}

郑凡凯 ^{[1
]}

谢阅 ^{[1
]}

李德鹏 ^{[1
]}

吴丹 ^{[2
]}

周子明 ^{[1
]}

孙小卫 ^{[1
]}

王恺 ^{[1
]}

机构：

[1] Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Department of Electrical and Electronic Engineering, Southern University of Science and Technolo

[2] Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology

来源：

Chinese Physics B | 2019年 / 28卷 / 12期

关键词：

lead chalcogenide; quantum dots; near-infrared; light emitting diodes;

D O I：

暂无

中图分类号：

O471.1 [半导体量子理论]; TN312.8 [];

学科分类号：

070205 ; 080501 ; 0809 ; 080903 ; 0803 ;

摘要：

This paper reviews the recent progress in the synthesis of near-infrared(NIR) lead chalcogenide(PbX; PbX = PbS,PbSe, PbTe) quantum dots(QDs) and their applications in NIR QDs based light emitting diodes(NIR-QLEDs). It summarizes the strategies of how to synthesize high efficiency PbX QDs and how to realize high performance Pb X based NIR-QLEDs.

引用

页码：5 / 17

页数：13

共 9 条

[1]

Kershaw S V,Harrison M,Rogach A L,Kornowski A. IEEEJ.Sel.Top.Quantum Electron . 2000

[2]

De Geyter B,Hens Z. Appl.Phys.Lett . 2010

[3]

Yarema M,Yarema O,Lin W M M,Volk S,Yazdani N,Bozyigit D,Wood V. Chemistry of Materials . 2017

[4]

Woo J Y,Ko J H,Song J H,Kim K,Choi H,Kim Y H,Lee D C,Jeong S. J.Am.Chem.Soc . 2014

[5]

Pan Y,Bai H,Pan L,Li Y,Tamargo M C,Sohel M,Lombardi J R. J.Mater.Chem . 2012

[6]

Hickey S G,Waurisch C,Rellinghaus B,Eychmüller A. J.Am.Chem.Soc . 2008

[7]

Pietryga J M,Werder D J,Williams D J,Casson J L,Schaller R D,Klimov V I,Hollingsworth J A. J.Am.Chem.Soc . 2008

[8]

Semonin O E,Luther J M,Beard M C. Mater.Today . 2012

[9]

Lu H,Joy J,Caspar RL,Bradforth SE,Brutchey RL. Chem Mater . 2016

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