Effects of Heat Treatment on Thermoelectric and Infrared Properties of Bi2Te3 Films

被引：0

作者：

Shi-Feng Zou ^{[1
]}

Pei-Heng Zhou ^{[1
]}

Xin Wang ^{[1
]}

Jian-Liang Xie ^{[1
]}

Long-Jiang Deng ^{[1
]}

机构：

[1] the School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China

来源：

Journal of Electronic Science and Technology | 2016年 / 01期

基金：

中国国家自然科学基金;

关键词：

Heat treatment; plasmonic; power factors; red-shift;

D O I：

暂无

中图分类号：

TN304 [材料];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

In this work,Bi2Te3 films(250 nm) are fabricated on Si O2/Si substrates by radio frequency(RF) magnetron sputtering at room temperature,and the prepared films are annealed over the temperature range of 200 °C to 400 °C.Crystallinity and electrical properties of the films can be tuned correspondingly.The power factors of Bi2Te3 films of 0.85 μW/K2 cm to 11.43 μW/K2 cm were achieved after annealing.The infrared reflectance measurements from 2.5 μm to 5.0 μm demonstrate that there is also a slight red-shift of the plasma oscillation frequency in the Bi2Te3 films.By means of plasmonic calculations,we attribute the red-shift of absorption peaks to the reduction of carrier concentration and the change of effective mass of Bi2Te3 films with the increased annealing temperature.

引用

页码：87 / 93

页数：7

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