AN ANOMALOUS HALL EFFECT IN n-Ge SAMPLES

被引:0
|
作者
邢旭
机构
[1] Northeast Normal University
[2] Changchun
[3] Department of Physics
关键词
Hall; AN ANOMALOUS HALL EFFECT IN n-Ge SAMPLES; Ge;
D O I
暂无
中图分类号
学科分类号
摘要
Although quite a few achievements have been made in the study of anomalous Hall effects, there is a great difference in the theoretical explanation of them. Recently this problem has been much studied both theoretically and experimentally.
引用
收藏
页码:1313 / 1315
页数:3
相关论文
共 50 条
  • [1] THE ANOMALOUS MAGNETORESISTANCE EFFECT OF n-Ge ABOVE ROOM TEMPERATURE
    邢旭
    Science Bulletin, 1987, (11) : 737 - 739
  • [2] Oxidized Mn:Ge magnetic semiconductor: Observation of anomalous Hall effect and large magnetoresistance
    Dang Duc Dung
    Choi, Jiyoun
    Feng, Wuwei
    Nguyen Cao Khang
    Cho, Sunglae
    PHYSICA B-CONDENSED MATTER, 2018, 532 : 119 - 125
  • [3] Broadband photodetector based on SnTe nanofilm/n-Ge heterostructure
    Song, Liyuan
    Tang, Libin
    Hao, Qun
    Teng, Kar Seng
    Lv, Hao
    Wang, Jingyu
    Feng, Jiangmin
    Zhou, Yan
    He, Wenjin
    Wang, Wei
    NANOTECHNOLOGY, 2022, 33 (42)
  • [4] Electroluminescence of n-Ge/i-Ge/p-Si heterojunction PIN LEDs
    Kil, Yeon-Ho
    Yang, Jong-Han
    Kim, Joung Hee
    Jeong, Joo Yong
    Kang, Sukill
    Jeong, Tae Soo
    Choi, Chel-Jong
    Kim, Taek Sung
    Shim, Kyu-Hwan
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2014, 64 (10) : 1430 - 1436
  • [5] Electroluminescence of n-Ge/i-Ge/p-Si heterojunction PIN LEDs
    Yeon-Ho Kil
    Jong-Han Yang
    Joung Hee Kim
    Joo Yong Jeong
    Sukill Kang
    Tae Soo Jeong
    Chel-Jong Choi
    Taek Sung Kim
    Kyu-Hwan Shim
    Journal of the Korean Physical Society, 2014, 64 : 1430 - 1436
  • [6] Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers
    Prokhorov, D. S.
    Shengurov, V. G.
    Denisov, S. A.
    Filatov, D. O.
    Zdoroveishev, A. V.
    Chalkov, V. Yu.
    Zaitsev, A. V.
    Ved', M. V.
    Dorokhin, M. V.
    Baidakova, N. A.
    SEMICONDUCTORS, 2019, 53 (09) : 1262 - 1265
  • [7] dc-Hydrogen plasma induced defects in bulk n-Ge
    Nyamhere, C.
    Venter, A.
    Murape, D. M.
    Auret, F. D.
    Coelho, S. M. M.
    Botha, J. R.
    PHYSICA B-CONDENSED MATTER, 2012, 407 (15) : 2935 - 2938
  • [8] Observing the quantum anomalous Hall effect
    Ling Wang
    NationalScienceReview, 2014, 1 (01) : 60 - 61
  • [9] Characterization of n-Ge/i-Ge/p-Si PIN photo-diode
    Yang, Hyeon Deok
    Kil, Yeon-Ho
    Yang, Jong-Han
    Kang, Sukill
    Jeong, Tae Soo
    Choi, Chel-Jong
    Kim, Taek Sung
    Shim, Kyu-Hwan
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2014, 22 : 37 - 43
  • [10] Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures
    Hudait, MK
    Venkateswarlu, P
    Krupanidhi, SB
    SOLID-STATE ELECTRONICS, 2001, 45 (01) : 133 - 141