Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature

被引：0

作者：

何超

刘智

张旭

黄文奇

薛春来

成步文

机构：

[1] StateKeyLaboratoryonIntegratedOptoelectronics,InstituteofSemiconductors,ChineseAcademyofSciences

来源：

Chinese Physics B | 2014年 / 23卷 / 11期

关键词：

Ge; multiple quantum wells; tensile strain; electroluminescence;

D O I：

暂无

中图分类号：

O471.1 [半导体量子理论];

学科分类号：

070205 ; 080501 ; 0809 ; 080903 ;

摘要：

Tensile-strained Ge/SiGe multiple quantum wells(MQWs) were grown on a Ge-on-Si virtual substrate using ultrahigh vacuum chemical vapor deposition on an n+-Si(001) substrate. Direct-bandgap electroluminescence from the MQWs light emitting diode was observed at room temperature. The quantum confinement effect of the direct-bandgap transitions is in good agreement with the theoretical calculated results. The redshift mechanism of emission wavelength related to the thermal effect is discussed.

引用

页码：431 / 434

页数：4