LowTemperatureSynthesisofAmorphousLa0.7Zn0.3MnO3FilmsGrownonp+-SiSubstratesandItsResistiveSwitchingProperties

Amorphous La0.7Zn0.3MnO3（LZMO） films were deposited on p+-Si substrates by sol-gel method at low temperature of 450 ℃.The Ag/LZMO/p+-Si device exhibits invertible bipolar resistive switching and the RHRS/RLRS was about 10～4-10～6 at room temperature which can be kept over 10～3 switching cycles.Better endurance characteristics were observed in the Ag/LZMO/p+-Si device,the VSet and the VReset almost remained after 10～3 endurance switching cycles.According to electrical analyses,the conductor mechanism was in low resistor state（LRS） governed by the filament conductor and in the high state（HRS） dominated by the trapscontrolled space-charge-limited current（SCLC） conductor.